SILICON MATERIAL WITH CONTROLLED AGGLOMERATED POINT DEFECTS AND OXYGEN CLUSTERS INDUCED BY THE LATERAL SURFACE

摘要

The present invention relates to a single crystal silicon ingot or wafer wherein the lateral incorporation effect of intrinsic point defects has been manipulated such that the formation of agglomerated intrinsic point defects and/or oxygen precipitate clusters in a ring extending radially inward from about the lateral surface of the ingot segment is limited.