Pile ups of threading dislocations in thick graded buffer layer are reduced by enhancing dislocation gliding. During formation of a graded SiGe buffer layer, deposition of SiGe from a silicon precursor and a germanium precursor is interrupted one or more times with periods in which the flow of the silicon precursor to the substrate is stopped while the flow of the germanium precursor to the substrate is maintained.
申请公布号
WO2007133358(A2)
申请公布日期
2007.11.22
申请号
WO2007US08879
申请日期
2007.04.09
申请人
S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES, S.A.;CODY, NYLES, W.;ARENA, CHANTEL;TOMASINI, PIERRE;MAZURE, CARLOS
发明人
CODY, NYLES, W.;ARENA, CHANTEL;TOMASINI, PIERRE;MAZURE, CARLOS