| 摘要 |
A semiconductor memory device is provided to reduce current consumption in a power supply circuit while a memory core circuit is in a standby mode to start a data write operation in an active state. A DRAM memory core circuit(12) includes a word line. A power supply circuit(14) generates a power supply voltage by operating in one of a first state and a second state and then provides the power supply voltage to the DRAM memory core circuit, and consumes higher current in the first state than in the second state. A control circuit(11) controls the power supply circuit in order to shift the power supply circuit from the first state into the second state and then to the first state again, until the word line of the DRAM memory core circuit is enabled and then disabled.
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