Inspection method of compound semiconductor substrate, compound semiconductor substrate, surface treatment method of compound semiconductor substrate, and method of producing compound semiconductor crystal

摘要

There are provided an inspection method of a compound semiconductor substrate that can have the amount of impurities at the surface of the compound semiconductor substrate reduced, a compound semiconductor substrate, a surface treatment method of a compound semiconductor substrate, and a method of producing a compound semiconductor crystal. In the inspection method of the surface of the compound semiconductor substrate, the surface roughness Rms of the compound semiconductor substrate is measured using an atomic force microscope at the pitch of not more than 0.4 nm in a scope of not more than 0.2 µm square. The surface roughness Rms of the compound semiconductor substrate measured by the inspection method is not more than 0.2 nm.