发明名称 |
Method and system for wafer-level tuning of bulk acoustic wave resonators and filters |
摘要 |
<p>A method and system for tuning a bulk acoustic wave device at the wafer level by adjusting the thickness of the device. In particular, the thickness of the device has a non-uniformity profile across the device surface. A mask having a thickness non-uniformity profile based partly on the thickness non-uniformity profile of the device surface is provided on the device surface for etching. A dry etching method is used to remove part of the mask to expose the underlying device surface and further removed the exposed device surface until the thickness non-uniformity of the device surface falls within tolerance of the device. <IMAGE></p> |
申请公布号 |
EP1258990(B1) |
申请公布日期 |
2007.11.21 |
申请号 |
EP20020008098 |
申请日期 |
2002.04.11 |
申请人 |
NOKIA CORPORATION |
发明人 |
ELLAE, JUHA;TIKKA, PASI;KAITILA, JYRKI |
分类号 |
H01L21/66;H03H3/013;G10K11/04;H01L41/09;H01L41/18;H01L41/22;H03H3/04;H03H9/17 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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