发明名称 A memory architecture with BIST
摘要 <p>This invention relates to a memory architecture with built-in testing mechanism integrated in said memory to support very efficient built-in self-test in Random Access Memories (RAMs) with greatly reduced overhead, in terms of area and speed. A method for in-built testing of a memory architecture is also described. </p>
申请公布号 EP1732082(A3) 申请公布日期 2007.11.21
申请号 EP20060011188 申请日期 2006.05.31
申请人 STMICROELECTRONICS PVL. LTD. 发明人 DUBEY, PRASHANT
分类号 G11C29/04 主分类号 G11C29/04
代理机构 代理人
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