REMOVING METHOD OF COPPER DIFFUSION BARRIER LAYER

摘要

A method for removing a copper diffusion barrier layer is provided to prevent deterioration of a physical characteristic of copper by minimizing the time difference between etching of a copper diffusion barrier layer and deposition of a barrier metal. A copper diffusion barrier layer is removed from an etch chamber(30) for the copper diffusion barrier layer in a fabricating process for forming a copper interconnection on a semiconductor substrate. The etch chamber for the copper diffusion barrier layer and a deposition chamber(40) for the barrier metal are incorporated in a system to etch the copper diffusion barrier layer. CF4 and Ar mixture gas is used as an etch gas in the etch chamber for the copper diffusion barrier layer. Pressure of 100-180 milliTorr, a source power of 300-5000 watts, bias power of 100-300 watts and CF4 of 10-20 sccm and Ar of 200-500 sccm are used in the etch chamber.