Method for treating a semi-conductor wafer

摘要

The treating silicon-on insulator (SOI) (5) wafers to fabricate microelectronic devices, comprises measuring a parameter characterizing the semiconductor wafers to determine the position-dependent parameter value on a total surface of the wafers, oxidizing the total surface of the wafers by gaseous oxidizing agent and simultaneous exposure of the total surface of the wafers, and removing the oxide layer. The oxidation rate and therewith the thickness of the resulting oxide layer are dependent of the light intensity exposed on the surface of the wafers. The treating silicon-on insulator (SOI) (5) wafers to fabricate microelectronic devices, comprises measuring a parameter characterizing the semiconductor wafers to determine the position-dependent parameter value on a total surface of the wafers, oxidizing the total surface of the wafers by gaseous oxidizing agent and simultaneous exposure of the total surface of the wafers, and removing the oxide layer. The oxidation rate and therewith the thickness of the resulting oxide layer are dependent of the light intensity exposed on the surface of the wafers. The exposure of the wafers takes place through light sources (2) and a filter mounted between the light source and the wafers. The filter has a position-dependent translucence, which is unique consistency with the position-dependent value of the parameter. From the position-dependent value of the parameter, a grayscale map is calculated by a computer and the exposure of the wafers is calculated via a projection device, which projects a picture of this grayscale map on the surface of the wafers. The light sources are arranged side by side in a plane lying parallel to the plane of the wafers. The light sources are so controlled individually or in groups that the light intensity influencing at each place on the surface of the wafers is unique consistency with the position-dependent value of the parameter. The parameter is the height variation of a defined ideal level and the thickness of the semiconductor layer. The light intensity is so position-dependently given that the differences in the position-dependent values of the parameter by the oxidation rate and the removal of the oxide layer are reduced. An independent claim is included for a device for treating a silicon-on insulator (SOI) wafers.