| 摘要 |
<p>A member for a semiconductor device of low price, capable of forming a high quality plating layer on a surface, having heat conductivity at high temperature (100°C) of more than or equal to 180 W/m·K and toughness that will not cause breaking due to screwing, and will not cause solder breaking due to heat stress when it is bonded to other member with solder, and a production method thereof are provided. A member for a semiconductor device (1) having a coefficient of thermal expansion ranging from 6.5 × 10 -6 /K to 15 × 10 -6 /K inclusive, and heat conductivity at 100°C of more than or equal to 180 W/m ·K, has: a base material (11) formed of an aluminum-silicon carbide composite material starting from powder material in which particulate silicon carbide is dispersed in aluminum or aluminum alloy, and the content of the silicon carbide is from 30% by mass to 85% by mass inclusive; and a superficial layer (12) containing aluminum or aluminum alloy starting from a melt material bonded on top and bottom faces of the base material (11).</p> |
