发明名称 MEMORY DEVICE WITH DECREASE NUMBER OF GLOBAL LINE
摘要 A memory device for reducing the number of global lines is provided to reduce the number of total lines connected to a memory core by sharing a global input/output line. A memory device includes a plurality of memory banks, a global input/output line and a bank selection signal transfer unit(100). The global input/output line transfers a data input/output signal of the bank during a normal operation. The bank selection signal transfer unit transfers a plurality of test bank selection signals to the bank through the global input/output line in a core test mode to test a core region of the bank during a test operation. The bank selection signal transfer unit includes a transfer control signal generation unit(120) and a transfer unit(140,160,180).
申请公布号 KR20070111088(A) 申请公布日期 2007.11.21
申请号 KR20060043981 申请日期 2006.05.16
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KO, JAE BUM
分类号 G11C7/10 主分类号 G11C7/10
代理机构 代理人
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