| 摘要 |
A semiconductor device includes: a first active region (10a) surrounded with an isolation region (11) of a semiconductor substrate (10); a first gate electrode (13a) formed over the first active region (10a) and having a protrusion protruding on the isolation region; a first side-wall insulating film (23a); an auxiliary pattern (13b) formed to be spaced apart in the gate width direction from the protrusion of the first gate electrode; a second side-wall insulating film (23b); and a stress-containing insulating film (19) containing internal stress and formed to cover the first gate electrode (13a), the first side-wall insulating film (23a), the auxiliary pattern (13b), and the second side-wall insulating film (23b). In this device, the distance between the first gate electrode (13a) and the auxiliary pattern (13b) is smaller than the sum total of: the sum of the thicknesses of the first (23a) and second (23b) side-wall insulating films; and the double of the thickness of the stress-containing insulating film (19).
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