| 摘要 |
The present invention refers to a method of forming a phase shift mask. In particular, the method comprises the steps of forming an absorber layer (2) on a substrate (1), forming a protective layer (3) on the absorber layer (2), forming and patterning a first mask structure (4) on the protective layer (3), transferring the pattern of the first mask structure (4) to the protective layer (3) and the absorber layer (2) by removing respective parts of the protective layer (3) and the absorber layer (2), thereby uncovering at least part of the substrate (1) by respective absorber layer openings, removing the first mask structure (4), forming and patterning a second mask structure (5) on a surface of the at least partly uncovered substrate (1), forming substrate openings (6) in regions that are not covered by the second mask structure (5) and/or the stack of the absorber layer (2) and the protective layer (3) by removing respective parts of the substrate (1), and removing said second mask structure (5) and said protective layer (3). |
