REFLECTIVE PHOTO MASK, METHOD OF FABRICATING THE SAME AND METHOD OF CORRECTING A DEVIATION OF CRITICAL DIMENSION OF HORIZONTAL AND VERTICAL PATTERNS ON WAFER IN EXTREME ULTRAVIOLET LITHOGRAPHY(EUVL) PROCESS USING THE SAME

摘要

A reflective photo mask, a manufacturing method thereof, and a method of correcting a deviation of a critical dimension of horizontal and vertical patterns on a wafer in an EUVL(Extreme Ultraviolet Lithography) process are provided to equalize reflective indexes of wafers by partially etching horizontal and vertical absorbing patterns on the reflective photo mask, when MTT(Mean To Target) values of thicknesses of the absorbing patterns are not zero. A reflective photo mask includes a mask substrate(10), vertical absorbing patterns(30v'), and horizontal absorbing patterns(30h). The mask substrate includes a reflective layer. The vertical absorbing patterns are arranged in a vertical direction on the mask substrate. The horizontal absorbing patterns are arranged in a horizontal direction in the mask substrate. The horizontal absorbing patterns have different thicknesses from the vertical absorbing patterns. The vertical and horizontal absorbing patterns have line width, whose CD(Critical Dimension) deviation due to an EUV(Extreme UltraViolet) inlet beam is compensated.