| 摘要 |
<p>A TFT(thin film transistor) substrate is provided to broaden the overlay area between two electrodes by increasing the surface area of upper/lower storage electrodes. A storage lower electrode(30) of an unevenness type having a concave portion and a convex portion is formed on a substrate. At least one insulation layer is formed on the lower storage electrode. A storage upper electrode(25) is formed on the insulation layer to form a storage capacitor, overlapping the lower storage electrode. A thickness of the lower storage electrode between the uppermost point of the convex portion and the lowermost point of the concave portion is around 50-100 percent of the entire thickness of the lower storage electrode. A pixel electrode(42) is connected to the upper storage electrode. A TFT is connected to the pixel electrode.</p> |
