| 摘要 |
A method for fabricating a semiconductor device is provided to reduce the stress caused by a silicon-rich oxide layer used as a hard mask layer by forming a dummy storage node contact hole on a bitline in a SWD(sub wordline driver) region. An interlayer dielectric is formed on a semiconductor substrate. A predetermined depth of the interlayer dielectric is etched to form a dummy storage node contact hole greater than a bitline contact hole. The dummy storage node contact hole is filled with a polysilicon layer to form a dummy storage node contact plug(180) wherein a predetermined empty space is guaranteed in the dummy storage node contact plug. The dummy storage node contact hole can be formed on a bitline edge part in an SWD region and a scribe line region.
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