发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 A semiconductor device and a manufacturing method of the same are provided to arrange and install a bump electrode by using a base layer including nickel on an electrode pad. A plurality of electrode pads(13) are arranged on one main surface of a semiconductor substrate(11). A copper layer is formed on a surface of each of the electrode pads. The copper layer is formed by using aluminum as a main material. A bump base layer is arranged on the electrode pads. A bump is arranged on the electrode pads through the bump base layer. The copper layer is formed with a discontinuous layer having a shape of spot or spackle or a shape of island. The density of the copper layer is reduced from the surface of each of the electrode pads in a thickness direction. The bump base layer is formed with a nickel layer.
申请公布号 KR100778041(B1) 申请公布日期 2007.11.21
申请号 KR20060114886 申请日期 2006.11.21
申请人 FUJITSU LIMITED 发明人 MAKINO YUTAKA;OKAMOTO TADAHIRO;KURITA TAKAKI
分类号 H01L23/50 主分类号 H01L23/50
代理机构 代理人
主权项
地址