NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE

摘要

A nitride-based semiconductor LED is provided to form a high-brightness nitride-based semiconductor LED stabilized from high static electricity by optimizing current spreading effect while minimizing an ESD impact. An n-type nitride semiconductor layer(120) is formed on a substrate. An active layer is formed in a predetermined region on the n-type nitride semiconductor layer. A p-type nitride semiconductor layer is formed on the active layer. A p-type electrode(160) having a p-type branch electrode(160a) is formed on the p-type nitride semiconductor layer. A p-type ESD pad(160b) is formed at the end of the p-type branch electrode, having a greater width than that of the end of the p-type branch electrode. An n-type electrode(150) having an n-type branch electrode(150a) is formed on the n-type nitride semiconductor layer on which the active layer is not formed. An n-type ESD pad(150b) is formed at the end of the n-type branch electrode, having a greater width than that of the end of the n-type branch electrode. The n-type branch electrode and the p-type branch electrode can be composed of at least one line wherein the line is made of one selected from a group of a straight line, a curve and a single closed curve.