A process for the production of a thin layer of a semiconducting compound

摘要

In the epitaxial production of a thin monocrystalline layer of a semi-conducting compound on a monocrystalline base, vaporized jets of the constituent elements of the compound are simultaneously directed on to the base which is maintained at a temperature above the condensation temperature of the most volatile element and below the condensation temperature of the least volatile element and of the compound itself, the density of the jet of the most volatile element being such as to ensure an excess of this element at the base surface. The compounds may be of the AIIIBv type such as InAs, InSb, GaAs and the base may be a single crystal of InAs, InSb, GaAs, ferrites or SiC. A doping element such as selenium may be incorporated in the coating by evaporating selenium simultaneously with the elements of the compound. The base is maintained at 500 DEG C.-750 DEG C. for the formation of an InAs layer and at 700-800 DEG C. for a GaAs layer. The AIIIBv compound is a compound of elements of Group IIIB (B, Al, Ga, In, Tl) and Group VB (N, P, As, Sb, Bi) of the Periodic Table. Specification 852,598 is referred to.