发明名称 |
INTEGRATED CIRCUIT AND METHOD FOR ITS MANUFACTURE |
摘要 |
<p>An integrated circuit and methods for its manufacture are provided. The integrated circuit comprises a bulk silicon substrate having a first region of <100> crystalline orientation and a second region of <110> crystalline orientation. A layer of silicon on insulator overlies a portion of the bulk silicon substrate. At least one field effect transistor is formed in the layer of silicon on insulator, at least one P-channel field effect transistor is formed in the second region of <110> crystalline orientation, and at least one N-channel field effect transistor is formed in the first region of <100> crystalline orientation.</p> |
申请公布号 |
EP1856731(A1) |
申请公布日期 |
2007.11.21 |
申请号 |
EP20060736290 |
申请日期 |
2006.02.28 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
WAITE, ANDREW M.;LUNING, SCOTT |
分类号 |
H01L21/8238;H01L21/20;H01L21/84;H01L27/12;H01L29/04;H01L29/78 |
主分类号 |
H01L21/8238 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|