| 摘要 |
<p>A semiconductor light emitting device having an overvoltage protection element is provided to prevent a connecting conductive layer from being easily cut by forming an insulation layer with a hole on a light transmitting conductive layer wherein the connecting conductive layer is connected to the light transmitting conductive layer through the hole of the insulation layer and covers a part of the surface of the insulation layer. A semiconductor light emitting device includes a silicon substrate(1), a main semiconductor region(2) for a light emitting device, a first electrode(3) and a second electrode(4). The silicon substrate has a protection device formation region(7). The first electrode includes a bonding pad electrode(20). From a planar point of view, the protection device formation region is disposed inside the bonding pad electrode. A light transmitting conductive layer(19) and an insulation layer(17) are arranged on the main semiconductor region. A hole(17b) is formed in the insulation layer, and the bonding pad electrode is connected to the light transmitting conductive layer by a band-type connecting conductive layer(22) including the hole.</p> |
