发明名称 |
Method for reduced N+ diffusion in strained Si on SiGe substrate |
摘要 |
Method for manufacturing a semiconductor device. The method includes forming source and drain extension regions in an upper surface of a SiGe-based substrate. The source and drain extension regions contain an N type impurity. Reducing vacancy concentration in the source and drain extension regions to decrease diffusion of the N type impurity contained in the first source and drain extension regions.
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申请公布号 |
US7297601(B2) |
申请公布日期 |
2007.11.20 |
申请号 |
US20050283882 |
申请日期 |
2005.11.22 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHIDAMBARRAO DURESETI;DOKUMACI OMER H. |
分类号 |
H01L21/336;H01L21/265;H01L21/332;H01L21/461;H01L21/8234;H01L21/8238;H01L29/10;H01L29/78;H01L31/117 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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