发明名称 |
Flip chip type nitride semiconductor light emitting device |
摘要 |
The present invention relates to a flip chip type nitride semiconductor light emitting device having p-type and n-type nitride semiconductor layers, and an active layer in between. The invention also has an ohmic contact layer formed on the p-type nitride semiconductor layer, a light-transmitting conductive oxide layer formed on the ohmic contact layer, and a highly reflective metal layer formed on the light-transmitting conductive oxide layer.
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申请公布号 |
US7297988(B2) |
申请公布日期 |
2007.11.20 |
申请号 |
US20050319343 |
申请日期 |
2005.12.28 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
CHAE SEUNG WAN;YOON SUK KIL;KO KUN YOO;SHIM HYUN WOOK;YI BONG IL |
分类号 |
H01L29/22;H01L33/10;H01L33/32;H01L33/42;H01L33/62 |
主分类号 |
H01L29/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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