发明名称 Image transfer process for thin film component definition
摘要 A method for fabricating a thin film component includes forming a wafer having a thin film layer, a release layer, and a patterned layer of photoresist. The pattern of the layer of photoresist is transferred to the release layer and the thin film layer. A layer of metal is added to the wafer. The wafer is heated to a temperature above a glass transition temperature of the photoresist for a period of time sufficient to cause deformation of the photoresist to an extent that the photoresist creates cracks in the metal layer. A solvent is applied to the wafer to dissolve the release layer, the solvent penetrating the cracks in the metal layer to reach the release layer. The release layer and any material above the release layer are removed.
申请公布号 US7297470(B2) 申请公布日期 2007.11.20
申请号 US20040751807 申请日期 2004.01.05
申请人 HITACHI GLOBAL STORAGE TECHNOLOGIES NETHERLANDS B.V. 发明人 CORNWELL DWIGHT;WERNER DOUGLAS JOHNSON
分类号 G03F7/20;G03F7/00;G11B5/127;G11B5/31 主分类号 G03F7/20
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