Non-volatile, resistive memory cell based on metal oxide nanoparticles, process for manufacturing the same and memory cell arrangement of the same

摘要

Disclosed is a non-volatile memory cell including a first conductive electrode region, a second conductive electrode region and a memory region disposed therebetween. The memory region includes one or a plurality of metal oxide nanoparticles, which contact and electrically connect the first and the second electrode region via contact locations and which exhibit a bistable resistance properties when applying an external voltage.