| 摘要 |
A semiconductor device is provided to embody higher electrostatic discharge resistance by using an electrostatic discharge element having a PN junction composed of N-type Si and P-type SiGe. An electrostatic discharge element having a PN junction of N-type silicon and P-type silicon germanium is directly connected to a terminal for receiving static electricity and a terminal(3) for discharging static electricity. A region of the P-type silicon germanium can include carbon. The electrostatic discharge element can be a SiGe bipolar transistor(5), an emitter or collector of the SiGe bipolar transistor can be N-type Si, and a base of the SiGe bipolar transistor can be P-type SiGe.
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