METHOD FOR FABRICATING CAPACITOR IN SEMICONDUCTOR DEVICE

摘要

A method for forming a capacitor of a semiconductor device is provided to prevent a leakage current by forming a dielectric layer with a high dielectric constant. A contact plug is formed in an interlayer dielectric of a semiconductor substrate(100). A storage node insulation layer(112) is formed on the contact plug. A storage node contact hole is formed in the storage node insulation layer. A metal layer for a storage node(118) is formed on the storage node contact hole. The metal layer for the storage node is node-separated to form a storage node electrode. A first zirconium oxide layer including a high dielectric material is formed on the storage node electrode. A nitridization process is performed on the first zirconium oxide layer. A second zirconium oxide layer is formed on the first zirconium oxide layer. A plate node is formed on the second zirconium oxide layer.