| 摘要 |
A plasma processing apparatus comprises a partition plate disposed between a plasma generating unit and a silicon substrate and having an opening. When a surface of the silicon substrate is nitrided in this plasma processing apparatus, the electron density in the surface of the silicon substrate is controlled to be within the range from 1e+7 (electrons.cm-3) to 1e+9 (electrons.cm-3). By using this plasma processing apparatus, deterioration of the silicon substrate and deterioration of a nitride film can be effectively suppressed.
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