Source/drain extension implant process for use with short time anneals

摘要

The present invention provides, in one embodiment, a process for fabricating a metal oxide semiconductor (MOS) device ( 100 ). The process includes forming a gate ( 120 ) on a substrate ( 105 ) and forming a source/drain extension ( 160 ) in the substrate ( 105 ). Forming the source/drain extension ( 160 ) comprises an abnormal-angled dopant implantation ( 135 ) and a dopant implantation ( 145 ). The abnormal-angled dopant implantation ( 135 ) uses a first acceleration energy and tilt angle of greater than about zero degrees. The dopant implantation ( 145 ) uses a second acceleration energy that is higher than the first acceleration energy. The process also includes performing an ultrahigh high temperature anneal of the substrate ( 105 ), wherein a portion ( 170 ) of the source/drain extension ( 160 ) is under the gate ( 120 ).