发明名称 Isolation control circuit and method for a memory device
摘要 A semiconductor memory includes a memory cell array, a sense amplifier, an isolation device interposed between the sense amplifier and a bit line of the memory cell array, and circuitry for transferring a charge contained in a memory cell of memory cell array to the bit line while the isolation device electrically isolates the bit line from the sense amplifier, and, after the charge is transferred to the bit line, for causing the isolation device to electrically connect the bit line to the sense amplifier.
申请公布号 US7298655(B2) 申请公布日期 2007.11.20
申请号 US20050073765 申请日期 2005.03.08
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOI JONG-HYUN;MIN YOUNG-SUN
分类号 G11C16/04 主分类号 G11C16/04
代理机构 代理人
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