| 摘要 |
FIELD: computer engineering, in particular, engineering of electrically reprogrammable permanent memory devices which store information when power is disabled. ^ SUBSTANCE: flash memory element of electrically reprogrammable permanent memory device contains semiconductor substrate with source and drain made in it on planar side, tunnel layer, memorizing layer, blocking layer and a latch, blocking layer is positioned on planar side of substrate, memorizing layer is made on blocking layer, tunnel layer is made on memorizing layer, and the gate is made on tunnel layer, where tunnel layer has thickness which prevents bypass of charge due to tunneling of charge carriers through tunnel layer to the gate. Thickness of tunnel layer is 1,52,5 nanometers. Memorizing layer may be made of silicon nitride, saturated with excessive silicon (SiNx). ^ EFFECT: increased reliability of flash memory element. ^ 5 cl, 1 dwg |
