Group III-V crystal and manufacturing method thereof

摘要

A method of manufacturing a group III-V crystal is made available by which good-quality group III-V crystals are easily obtained at low cost without causing cracks, even when using a variety of substrates. A method of manufacturing a group III-V crystal, characterized in including: a step of depositing a metal film ( 2 ) on a substrate ( 1 ); a step of heat-treating the metal film ( 2 ) in an atmosphere in which a patterning compound is present; and a step of growing a group III-V crystal ( 4 ) on the metal film after the heat treatment. Additionally, a method of manufacturing a group III-V crystal, characterized in including: a step of growing a group III-V compound buffer film on the metal film after the heat treatment; and a step of growing a group III-V crystal on the group III-V compound buffer film.