发明名称 Optically improved CMOS imaging sensor structure to lower imaging lens requirements
摘要 A sensor die that lowers the lens requirements by the use of a variable thickness distribution over the sensor die. The sensing portion of the sensor die has a different number of layers than the non-sensing portion of the sensor die. By reducing the thickness of each layer and/or eliminating one or more unnecessary layers in the sensing portion, the thickness of the sensing portion is reduced to lower the amount of stray light and allow an increase in chief ray angle as well as a decrease in the F-number of the imaging system coupled to the sensor die without compromising the image quality of the sensor die. Also, the thickness reduction provides the design engineers with extra allowance in handling the chief ray angle and F-number for a given lens requirements.
申请公布号 US7297916(B1) 申请公布日期 2007.11.20
申请号 US20050064346 申请日期 2005.02.22
申请人 MAGNACHIP SEMICONDUCTOR, LTD. 发明人 FENG CHEN
分类号 H01L27/00;H04N5/225 主分类号 H01L27/00
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