| 摘要 |
<p>PURPOSE: A method for fabricating a silicon solar cell is provided to reduce energy cost by lowering a temperature of a thermal process and improve conversion efficiency by reducing impurities and thermal budget. CONSTITUTION: An emitter junction is formed by diffusing phosphor on a front surface(22a) of a p-type silicon substrate(20). An oxide layer is removed from a back surface(22) of the p-type silicon substrate(20). An aluminum layer(24) and an amorphous silicon layer(25) are formed on the back surface of the p-type silicon substrate(20) by using a vacuum deposition method or a sputtering method. A thermal process is performed under inert gas atmosphere or hydrogen gas atmosphere to form a p+ type silicon layer(27) and an aluminum layer(26). The thermal process is performed under a temperature lower than eutectic temperature. A back junction region(28) is generated by forming the p+ type silicon layer(27) and the aluminum layer(26).</p> |
