发明名称 |
PROFILE ADJUSTMENT IN PLASMA ION IMPLANTATION |
摘要 |
A method and apparatus are directed to providing a dopant profile adjustment solution in plasma doping systems for meeting both concentration and junction depth requirements. Bias ramping and bias ramp rate adjusting may be performed to achieve a desired dopant profile so that shallow and abrupt junctions in vertical and lateral directions are realized that are critical to device scaling in plasma doping systems. |
申请公布号 |
KR20070110551(A) |
申请公布日期 |
2007.11.19 |
申请号 |
KR20077023297 |
申请日期 |
2006.03.15 |
申请人 |
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. |
发明人 |
FANG ZIWEI;APPEL RICHARD;DENO VICENT;SINGH VIKRAM;PERSING HAROLD M. |
分类号 |
H01J37/08;H01J37/32;H01J37/36 |
主分类号 |
H01J37/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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