SEMICONDUCTOR DEVICE AND DISPLAY DEVICE

摘要

A semiconductor device and a display device are provided to reduce the crystallization processes of a semiconductor film to realize system on panel of a light emitting device without a complicated TFT (thin film transistor) process. A gate electrode(110) is formed on a substrate(100). A gate insulating layer(111) is formed on the gate electrode. A first semiconductor layer(112) is made of semi-amorphous silicon and formed on the gate electrode with the gate insulating layer. A second semiconductor layer(113) is formed on the first semiconductor layer. A pair of third semiconductor layers(114) are formed on the first semiconductor layer and have n type conductivity. The second semiconductor layer having conductivity lower than the third semiconductor layers is inserted between the first semiconductor layer and at least a pair of third semiconductor layers. A first conductive layer is formed on one of the pair of third semiconductor layers. A second conductive layer is formed on the other of the pair of third semiconductor layers.