TRENCH GATE MOSFET DEVICE AND THE FABRICATING METHOD THEREOF

摘要

A trench gate MOSFET device and a fabricating method thereof are provided to improve electrical characteristics thereof by forming a channel and a drain in a horizontal direction. A first conductive type low-density epitaxial layer(52) is formed on a first conductive type high-density semiconductor substrate(50). A plurality of second conductive type base regions(54) are formed on a predetermined region of the first conductive type low-density epitaxial layer. A first conductive type source region(56) is formed on the base region. A first conductive type drain region(57) is formed between the base region and the base region. A trench(T) is formed through the source region and the base region. A first gate conductive layer(60) is formed within the trench. A second gate conductive layer(61) is formed on the exposed base region.