| 摘要 |
An element isolation insulating film is formed in the surface of a semiconductor substrate (11) in a circuit region wherein semiconductor integrated circuits are formed, and five element isolation insulating films (12m) extending in a certain direction are formed in a monitor region (1) at certain intervals. Then, a gate insulating film and a gate electrode are formed on the semiconductor substrate (11) in the circuit region, and five gate insulating films (13m) and five gate electrodes (14m) extending in the same direction as the element isolation insulating films (12m) are formed in the monitor region (1) at the same intervals as the element isolation insulating films (12m).
|
