CMOS IMAGE SENSOR AND THE METHOD OF FABRICATING THEREOF

摘要

A CMOS image sensor and a manufacturing method of the same are provided to shorten a process time and to improve sensitivity by eliminating a process for manufacturing a color filter for blue color. A semiconductor substrate(100) is doped with a first type impurity. A first type photodiode(110) is formed within the semiconductor substrate. The first type photodiode is doped with the first type impurity having the density higher than that of the first type impurity of the semiconductor substrate. A photodiode is formed on an upper part of the first type photodiode. The photodiode is doped with a second type impurity having a depth of 0.1 to 0.2 micrometers from a surface of the semiconductor substrate. The first type impurity is formed with a P type impurity. The second type impurity is formed with an N type impurity.