METHOD OF FORMING AN AMORPHOUS CARBON FILM AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME

摘要

A method for forming an amorphous carbon layer and a method for manufacturing a semiconductor device using the same are provided to form the amorphous carbon layer by vaporizing a hydrocarbon compound of a chain structure having a double bond. A substrate(110) is loaded into an inside of a chamber. A liquefied hydrocarbon compound is supplied to the inside of the chamber by vaporizing the liquefied hydrocarbon compound of a chain structure having a double bond. An amorphous carbon layer(130) is formed on the substrate by ionizing the liquefied hydrocarbon compound. The etch selectivity of the amorphous carbon layer to an oxide layer is 1 : 5 - 1 : 40. The etch selectivity of the amorphous carbon layer to a nitride layer is 1 : 1 - 1 : 20. The hydrocarbon compound includes one or more elements of C6H12, C9H18, C12H24, and C15H30.