| 摘要 |
A plasma etching method is provided to prevent an etch-stopping state or an increase of a contact resistance due to attachment of a polymer and to reduce a gradient of a sidewall. A chamber transfer process is performed to transfer a substrate having a mask pattern to an inside of a chamber. An etch gas supply process is performed to supply an etch gas to the inside of the chamber. A plasma ion forming process is performed to generate plasma ions by applying the first bias power(16) to the plasma generation unit. An etch process is performed to move the plasma ions to the substrate to etch the exposed part by applying second bias power(17) to an electric field generation unit. The incident energy of the plasma ions are increased gradually by increasing gradually the second bias power.
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