METHOD OF FORMINING METAL LINE IN SEMICONDUCTOR DEVICE

摘要

A method for forming a metal wire of a semiconductor device is provided to suppress a standing wave and to obtain the metal wire with a correct CD by performing a plasma process to increase surface roughness of a layer. A metal layer(102) is formed on a semiconductor substrate(100). An anti-reflective layer is formed on the metal layer. A concavo-convex part is formed on a surface of the anti-reflective layer by plasma-processing the anti-reflective layer. A photoresist layer pattern is formed on the anti-reflective layer. The anti-reflective layer and the metal layer are etched by using the photoresist layer pattern as a mask. A metal wire is formed by etching the anti-reflective layer and the metal layer. The photoresist layer pattern and the anti-reflective layer are removed.