| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an image display apparatus which can improve throughput and can be manufactured at a low cost by curtailing a photolithography process in a polysilicon thin film transistor manufacturing process. <P>SOLUTION: The image display apparatus has a plurality of gate lines, a plurality of signal lines crossing a plurality of gate lines in a matrix form and a plurality of thin film transistors on an insulating substrate and a plurality of gate lines become a laminated electrode. A plurality of thin film transistors are constituted of two kinds thereof, a n-channel conduction type and a p-channel conduction type. A gate electrode of one thin film transistor is the laminated electrode having the same constitution as that of the gate line and the gate electrode of another thin film transistor is constituted of the same layers of electrodes as that of a lower layered electrode of the gate line. <P>COPYRIGHT: (C)2008,JPO&INPIT |
