| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an electrostatic chuck ensuring close contact with a wafer and excellent cooling characteristic that is very useful for high precision process, can reduce particles generated at the time of attracting a wafer, and can also achieve fine wire process; because wafer temperature can be maintained to an equal and a constant temperature with higher accuracy in the step required to hold the wafer in manufacture of a semiconductor integrated circuit, particularly in the plasma etching step, ion implantation step, and sputtering step. <P>SOLUTION: In this electrostatic chuck, a silicone rubber layer mixed with a reinforcing silica but not including any other filling agent in the mean particle size of 0.5μm or more is provided to the surfaces of an insulating material layer, and the surface to be in contact with an object to be attracted of the electrostatic chuck having an electrode provided within the insulating material layer. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
