发明名称 |
HIGH POWER IMPULSE MAGNETRON SPUTTERING VAPOUR DEPOSITION |
摘要 |
Method and apparatus for physical vapour deposition (PVD) and in particular high power impulse magnetron sputtering (HIPIMS) deposition is described. The present apparatus and process provide for the creation of a weaker magnetic field in the region of the cathode which reduces the confinement of a significant part of the plasma near the target surface. By weakening the magnetic field in the region of the target, the deposition rate of materials at a substrate has been found to increase by a factor of 9 relative to that of conventional HIPIMS processes employing typical magnetic field strengths. |
申请公布号 |
WO2007129021(A1) |
申请公布日期 |
2007.11.15 |
申请号 |
WO2007GB01483 |
申请日期 |
2007.04.24 |
申请人 |
SHEFFIELD HALLAM UNIVERSITY;EHIASARIAN, ARUTIUN, P. |
发明人 |
EHIASARIAN, ARUTIUN, P. |
分类号 |
H01J37/34 |
主分类号 |
H01J37/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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