发明名称 |
MANUFACTURE OF CDTE PHOTOVOLTAIC CELLS USING MOCVD |
摘要 |
A CdTe photovoltaic cell according to the present invention comprises an n- type CdS window layer; a p-type CdTe absorber layer; and a CdCl<SUB>2</SUB> cap layer. The cell is manufactured by growing each successive layer by MOCVD in situ. In the particular example of figure 1, the cell (100) comprises a transparent superstrate (101), a layer of transparent conductive oxide (TCO) (102), a high resistivity (high-p) layer (103), a front contact (104) formed upon the TCO layer, a window layer (105), an absorber layer (106), a highly p+ doped layer (107), a cap layer (108) and a back contact (109) provided upon said cap layer (108). |
申请公布号 |
WO2007129097(A2) |
申请公布日期 |
2007.11.15 |
申请号 |
WO2007GB01698 |
申请日期 |
2007.05.08 |
申请人 |
UNIVERSITY OF WALES, BANGOR;BARRIOZ, VINCENT;IRVINE, STUART, JAMES, CURZON |
发明人 |
BARRIOZ, VINCENT;IRVINE, STUART, JAMES, CURZON |
分类号 |
H01L31/18;H01L31/0296 |
主分类号 |
H01L31/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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