| 摘要 |
PROBLEM TO BE SOLVED: To provide a process for fabricating a semiconductor device in which the time required for forming the film of first and second semiconductor layers by SBSI method can be shortened. SOLUTION: The process for fabricating a semiconductor device comprises a step for forming a first semiconductor layer 11 of amorphous or polycrystalline structure on the surface region 2 of a single crystal semiconductor substrate 1; a step for forming a second semiconductor layer 12 of amorphous or polycrystalline structure on the first semiconductor layer 11; a step for rendering the surface region 2 of the semiconductor substrate 1, the first semiconductor layer 11, and the second semiconductor layer 12 amorphous by implanting Si or Ar ions from above the second semiconductor layer 12 toward the surface region 2 of the semiconductor substrate 1; and a step for rendering the surface region 2 of the semiconductor substrate 1, the first semiconductor layer 11, and the second semiconductor layer 12 single crystal by heat treating the semiconductor substrate 1 following to step for rendering amorphous by ion implantation. COPYRIGHT: (C)2008,JPO&INPIT
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