| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of inhibiting the mutual short circuit of adjacent floating gates. SOLUTION: In the manufacturing method for the semiconductor device, the floating gates for a memory cell formed to a stack-gate NAND flash memory are separated along the word-line direction (ST.2). In the manufacturing method, a shallow trench is formed, and the floating gates are separated along the bit-line direction (ST.3). COPYRIGHT: (C)2008,JPO&INPIT
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