| 摘要 |
PROBLEM TO BE SOLVED: To provide a bevel etching apparatus which is relatively simple in structure and can perform bevel etching without deforming a substrate, and to provide a bevel etching method. SOLUTION: The semiconductor substrate 7 is inserted into a space of an electrically connected electrode 1. A high-frequency power supply 6 is connected to the electrode 1, and a supporting body 8 for supporting the semiconductor substrate 7 is applied with the ground potential. By supplying a gas into the space of the electrode 1 and applying high-frequency power to the electrode 1, atmospheric-pressure glow discharge is generated between the electrode 1 and the semiconductor substrate 7. Under this state, the semiconductor substrate 7 is turned in the circumferential direction to conduct bevel etching on it. COPYRIGHT: (C)2008,JPO&INPIT
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