发明名称 |
Method and system for reducing charge damage in silicon-on-insulator technology |
摘要 |
According to one embodiment of the invention, a silicon-on-insulator device includes an insulative layer formed overlying a substrate and a source and drain region formed overlying the insulative layer. The source region and the drain region comprise a material having a first conductivity type. A body region is disposed between the source region and the drain region and overlying the insulative layer. The body region comprises a material having a second conductivity type. A gate insulative layer overlies the body region. This device also includes a gate region overlying the gate insulative layer. The device also includes a diode circuit conductively coupled to the source region and a conductive connection coupling the gate region to the diode circuit.
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申请公布号 |
US2007264804(A1) |
申请公布日期 |
2007.11.15 |
申请号 |
US20070782523 |
申请日期 |
2007.07.24 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
GALLIA JAMES D.;KRISHNAN SRIKANTH;KRISHNAN ANAND T. |
分类号 |
H01L21/20;H01L27/12 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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