发明名称 Semiconductor device using buried oxide layer as optical wave guides
摘要 A semiconductor optical wave guide device is described in which a buried oxide layer (BOX) is capable of guiding light. Optical signals may be transmitted from one part of the semiconductor device to another, or with a point external to the semiconductor device, via the wave guide. In one example, an optical wave guide is provided including a core insulating layer encompassed by a clad insulating layer. The semiconductor device may contain an etched hole for guiding light to and from the core insulating layer from a transmitter or to a receiver.
申请公布号 US2007262327(A1) 申请公布日期 2007.11.15
申请号 US20060432483 申请日期 2006.05.12
申请人 TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC. 发明人 SHIMOOKA YOSHIAKI
分类号 H01L33/00;H01L21/00;H01L27/15;H01L29/26;H01L31/12 主分类号 H01L33/00
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